single electron transistor

Novel Simulation Method of Single Electron Transistor Based on Master Equation

基于主方程单电子晶体管模拟新方法

Simulation and Analysis on Characteristics of Single Electron Transistor

单电子晶体管的数值模拟及特性分析

The Second Order Band - Pass Filter with Single Electron Transistor

一种基于单电子晶体管的二阶带通滤波器

Numerical Analysis of Single Electron Transistor / Field Effect Transistor Hybrid Memory Cell

单电子晶体管/场效应管混合存储单元数值分析

Analysis of Capacitance Coupled Three Junction Single Electron Transistor Characteristics

电容耦合三结单电子晶体管特性分析

The Integrator Realized with Single Electron Transistor And Analyzing for Its Performance

采用单电子晶体管实现的积分器及其性能分析

Improvement of Electro Mechanical Single Electron Transistor Semi-classical Model and Investigation of Its Transport Characteristics

机电单电子晶体管半经典模型的改进和输运特性的研究

Active Loads Based on Capacitively Coupled Single Electron Transistor

电容耦合单电子晶体管有源负载

A novel single electron transistor with potential applications and its fabrication technique are reported in the paper .

本文报导了一种实用新型单电子晶体管，介绍了它的制备方法，并讨论了它的应用前景。

Conductance Oscillation of the Single Electron Transistor and Its Explanation

单电子晶体管电导振荡及其解释

Fabrication and Characteristics of a Si-Based Single Electron Transistor

硅单电子晶体管制备及特性

The Research of Novel Simulation Method of Single Electron Transistor Based on Master Equation and the Theory of Single Electron Electronic Circuit

基于主方程单电子器件模拟新方法及单电子电路理论研究

Numerical Simulation of Capacitance Coupled Three-junction Single Electron Transistor Made of High-Tc Superconductor

电容耦合三结高温超导单电子晶体管数值模拟

Based on the orthodox theory , a model of a single electron transistor ( SET ) of metallic tunneling junctions is built using the master equation method .

在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。

The simulation of the SET ( single electron transistor ) which is comprised of single Columb island and multi - islands are done using the simulator .

利用该程序，对单库仑岛和多库仑岛的单电子晶体管（SET）系统进行了模拟。

The I-V_a and I-V_g curves of single electron transistor composed of metal tunnel junctions are simulated using master equation method , based on the orthodox theory .

在正统单电子理论的基础上，使用主方程方法，对金属隧道结组成的单电子晶体管进行了I-Vg和I-Va特性曲线的数值模拟。

The maximum quantum dot sizes which can form the SET ( Single Electron Transistor ) at room temperature are found by the computation of the capacitance of semiconductor nanoparticles such as CdS and PbS , etc.

通过对CdS、PbS等半导体纳米粒子的充电电容的计算找到了其在室温下形成单电子器件的最大粒径。

The background of the single electron transistor and its principle are introduced The up to date fabricating techniques and numerical modeling are described And its shortcomings are also discussed in the paper Furthermore , the prospect of its applications is reviewed

文章介绍了单电子晶体管的产生背景、工作原理、最新的制备工艺、计算机数值模拟和存在的问题，并对其应用前景进行了展望

Electromechanical single electron transistor ( EMSET ) achieves dynamic coupling between single electron tunneling and the island vibration . It not only belongs to one of most essential devices of NEMS , but also reveals the important physical mechanism in complex devices .

机电单电子晶体管（EMSET）实现了单电子隧穿和岛区振动间的动态耦合，它既是一种最基本的NEMS器件，又是研究复杂NEMS器件的物理机制的重要单元之一。

Research Development of the Single - electron Transistor

单电子晶体管研究进展

Single - electron transistor and its fabrication

单电子晶体管及其工艺制作技术

The generation mechanisms of these physical phenomena of Coulomb blockade , Coulomb staircase , single electron tunneling were described with single electron transistor ( SET ) as the research object .

以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。